| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MTP50N05E |
MOT|Motorola |
N/a |
3 |
 |
|
| MTP50N05E |
MOTOROLA|Motorola |
N/a |
1500 |
|
|
MTP50N06 ,TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06V/D* * *** *Motorola Preferred Devic ..
MTP50N06 ,TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP50N06EL ,TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP50N06V ,TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTP50N06VL ,Power MOSFET 42 Amps, 60 Volts, Logic Level
NAND02GW3B2DZA6F , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
NAND04GW3B2BN6E , 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
NAND08GAH0AZA5E , 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard™ interface
