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Partno	Mfg	Dc	Qty	Available	Descript
MTP3N60	ST	N/a	3	avai	Trans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220

MTP3N60 ,Trans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220MTP3N60MTP3N60FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP3N60 600 V ..
MTP40N10E ,Power MOSFET 40 Amps, 100 Volts
MTP4N08 ,N-Channel Power MOSFETs, 5.5 A, 60-100V3469674 FAIRCHILD SEMICONDUCTOR YI iii0lberssu; DUE7EI3L| ll 1ltlelltlIl--l-il" |RF510-513 'r-ir ..
MTP4N40E ,TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP4N50E ,TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP4N80E ,OBSOLETEELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NAND02GW3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GW3B2DN6E , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
NAND02GW3B2DN6E , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
NAND02GW3B2DZA6E , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
NAND02GW3B2DZA6F , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
NAND04GW3B2BN6E , 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories

MTP3N60
Trans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220
MTP3N60
MTP3N60FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
November 1996
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area
1/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
MTP3N60/FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
MTP3N60/FI
3/10
Thermal Impedeance For TO-220
Derating Curve For TO-220
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Transfer Characteristics
MTP3N60/FI
4/10
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
Temperature
MTP3N60/FI
5/10
Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode Forward Characteristics
MTP3N60/FI
6/10

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