| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MTP3N120 |
ON|ON Semiconductor |
N/a |
50 |
 |
|
MTP3N120E ,TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP3N50E ,TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP3N50E. ,TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N50E/D* * ** ** * Motorola Preferred Dev ..
MTP3N60 ,Trans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220MTP3N60MTP3N60FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP3N60 600 V ..
MTP40N10E ,Power MOSFET 40 Amps, 100 Volts
NAND02GW3B2CN6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GW3B2CN6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GW3B2CZA6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
