| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MTP25N03A |
|
N/a |
50 |
 |
|
MTP27N10E ,TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM3, DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)RDS(on) ..
MTP27N10E ,TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP27N10E ,TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–to–Source Voltage V ..
MTP2955E ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP2955V ,Power MOSFET 12 Amps, 60 Voltshttp://onsemi.com3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURREN ..
NAND01GR3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3B2CZA6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
