MTP15N06V ,TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MTP16N25E ,TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP1N60E ,TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP20N06V ,TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP20N10 ,N-Channel Power MOSFETs, 20 A, 60-100 Vapplications, such as switching power supplies, UPS, AC
and DC motor controls, relay and solenoid ..
MTP20N15E ,Power MOSFET 20 Amps, 150 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CSRating Symbol Value UnitDrain–Source Voltage V 1 ..
NAL40-7617 , 40W AC/DC Universal Input Switch Mode Power Supplies
NAND01GR3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3B2CZA6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
MTP15N06V
TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
MTP15N06V
Power MOSFET
15 Amps, 60 Volts
N−Channel TO−220This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.• Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
