| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MTP15N05E |
MOT|Motorola |
N/a |
80 |
 |
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| MTP15N05E |
MOTOROLA|Motorola |
N/a |
45 |
|
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
MTP15N06
MTP15N06 MOT
MTP15N05E , POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
MTP15N06V ,TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MTP16N25E ,TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP1N60E ,TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP20N06V ,TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NAL40-7617 , 40W AC/DC Universal Input Switch Mode Power Supplies
NAND01GR3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
