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MTP12P10MOTN/a10avaiTMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM
MTP12P10ONN/a61avaiTMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM


MTP12P10 ,TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Max UnitOFF ..
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MTP12P10
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM
 - -P–Channel Enhancement–Mode Silicon Gate
This TMOS Power FET is designed for medium voltage, high
speed power switching applications such as switching regulators,
converters, solenoid and relay drivers. Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100°C Designer’s Data — IDSS, VDS(on), VGS(th) and SOA Specified
at Elevated Temperature Rugged — SOA is Power Dissipation Limited Source–to–Drain Diode Characterized for Use With Inductive Loads
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
THERMAL CHARACTERISTICS
Designer’s Data for “Worst Case” Conditions—
The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
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