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MTP12N10EMOTN/a15avaiTMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM


MTP12N10E ,TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP12N20 ,N-Channel Power MOSFETs, 12A, 150-200 Vapplications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid ..
MTP12P06 ,POWER FIELD EFFECT TRANSISTORELECTRICAL CHARACTERISTICS (Tc = 25''C unless otherwise noted)Characteristic Symbol Min Max UnitOFF ..
MTP12P10 ,TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Max UnitOFF ..
MTP12P10 ,TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Max UnitOFF ..
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NAND01GR3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3B2CZA6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory


MTP12N10E
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
 -- -  -N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients. Designed to Eliminate the Need for External Zener Transient
Suppressor — Absorbs High Energy in the Avalanche Mode Commutating Safe Operating Area (CSOA) Specified for Use
in Half and Full Bridge Circuits Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ ≤ 175°C)
THERMAL CHARACTERISTICS
Designer’s Data for “Worst Case” Conditions—
The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
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