MTD3055VL1 ,Power MOSFET 12 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD3055VLT4 ,Power MOSFET 12 Amps, 60 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTD3055VT4 ,Power MOSFET 12Amps, 60 Volts3, DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS), DRAIN-TO-SOURCE RESISTANCE RRDS(on) ..
MTD3302 ,OBOSLETEMAXIMUM RATINGS (T = 25°C unless otherwise specified)JY = YearParameter Symbol Value UnitWW = Work ..
MTD3302 ,OBOSLETE
MTD4N20E ,OBSOLETE3, DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)RDS(on) ..
N87C251SA16 , HIGH-PERFORMANCE CHMOS MICROCONTROLLER
N87C251SB16 , HIGH-PERFORMANCE CHMOS MICROCONTROLLER
N87C42 , UNIVERSAL PERIPHERAL INTERFACE CHMOS 8-BIT SLAVE MICROCONTROLLER
N87C54 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
N87C54-24 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
N87C58-1 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
MTD3055VL1-MTD3055VLT4
Power MOSFET 12 Amps, 60 Volts
MTD3055VL
Preferred DevicePower MOSFET12 Amps, 60 Volts
N–Channel DPAKThis Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients. Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
