MTD20N03HDL ,Power MOSFET 20 Amps, 30 Volts, Logic Level N-Channel DPAK3R , DRAIN-TO-SOURCE RESISTANCE (OHMS), DRAIN-TO-SOURCE RESISTANCER DS(on)DS(on) I , DRAIN CURRENT ..
MTD20N03HL ,HDTMOS E-FET High Density Power FET DPAK for Surface Mount**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTD20N03HDL/D* * * ** * Motorola Preferred D ..
MTD20N03HL ,HDTMOS E-FET High Density Power FET DPAK for Surface Mount**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTD20N03HDL/D* * * ** * Motorola Preferred D ..
MTD20N06HD ,Power MOSFET 20 Amps, 60 Volts3R , DRAIN−TO−SOURCE RESISTANCE (OHMS)DS(on)I , DRAIN CURRENT (AMPS)D, DRAIN−TO−SOURCE RESISTANCERD ..
MTD20N06HDL ,Power MOSFET 20 Amps, 60 Volts, Logic Level3, DRAIN-TO-SOURCE RESISTANCER R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)DS(on) ..
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MTD20N03HDL
Power MOSFET 20 Amps, 30 Volts, Logic Level N-Channel DPAK
MTD20N03HDL
Preferred DevicePower MOSFET 20 Amps, 30 Volts, Logic Level
N–Channel DPAKThis advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. This energy efficient
design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
