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MTD1P40E ,OBSOLETEto provide enhanced voltage–blocking capability without degradingperformance over time. In addition ..
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MTD1N80E
TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
Designer’s Data Sheet
TMOS E-FET .
Power Field Effect Transistor
DPAK for Surface Mount
N−Channel Enhancement−Mode Silicon GateThis high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage−blocking capability without
degrading performance over time. In addition this advanced TMOS
E−FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain−to−source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Surface Mount Package Available in 16 mm, 13−inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E−FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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