| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MTD15N06VLT4 |
MOTOROLA|Motorola |
N/a |
825 |
 |
|
MTD1N50E ,TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM3, DRAIN-TO-SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R , DRAIN-TO-SOURCE RESISTANCE (OHMS)RDS(on) ..
MTD1N60E ,TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD1N80E ,TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD1P40E ,OBSOLETEELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD1P40E ,OBSOLETEto provide enhanced voltage–blocking capability without degradingperformance over time. In addition ..
N82S23N ,256-bit TTL bipolar PROM 32 x 8
N8344AH , SDLC Communications Controller
N83C196KB , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
