| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MTB52N60U |
ON|ON Semiconductor |
N/a |
190 |
 |
|
MTB60N06 ,TMOS POWER FET 60 AMPERES 60 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB60N06HD ,TMOS POWER FET 60 AMPERES 60 VOLTSMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTB6N60E ,TMOS POWER FET 6.0 AMPERES 600 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB6N60E1 ,TMOS POWER FET 6.0 AMPERES 600 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB75N03HDL ,TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
N82HS195BN , PHILIPS COMPONENTS-SIGNETICS
N82HS195BN , PHILIPS COMPONENTS-SIGNETICS
N82S23N ,256-bit TTL bipolar PROM 32 x 8
