Partno |
Mfg |
Dc |
Qty |
Available | Descript |
MT58L512L18FS-10A |
MT |
N/a |
61 |
|
|
MT58L64L36FT-8.5 , 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L64L36FT-8.5 , 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L64L36FT-8.5 , 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT5C6404 , 16K x 4 SRAM SRAM MEMORY ARRAY
MT6C03AE ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS Q1/Q2 (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-o ..
N302AP ,N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsApplications• DC/DC converters•C (Typ) = 11000pFISSSOURCEDRAINGATEDGDRAINS (FLANGE)TO-220ABMOSFET M ..
N302AS ,N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsApplications• DC/DC convertersC (Typ) = 11000pFISSDRAIN(FLANGE)DGATEGSOURCESTO-263ABMOSFET Maximum ..
N302AS ,N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsapplications, this device improvesDS(ON) GSthe overall efficiency of DC/DC converters and allowsQ ..