Partno |
Mfg |
Dc |
Qty |
Available | Descript |
MT3S150P(TE12L,F) |
TOSHIBA|TOSHIBA |
N/a |
3000 |
|
|
MT3S16U ,Radio-frequency bipolar transistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Condition Min Typ. MaxUnitI V = 5 V, ..
MT3S19TU ,Radio-frequency bipolar transistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MT3S22P ,Radio-frequency bipolar transistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MT3S35T ,TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES Low Noise Figure :NF=1.4dB (@f=2GHz) 2 High Gain:|S21e| =13.0dB (@f=2GHz) Marking ..
MT3S36FS ,TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES Low Noise Figure :NF=1.3dB (@f=2GHz) 2 High Gain:|S21e| =12.5dB (@f=2GHz) 1 3 2 0.1± ..
MX29LV320BTC-90 , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320BTC-90 , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320BTC-90 , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY