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MT3S07TTOSHIBAN/a8000avaiTRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS


MT3S07T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 Il 0.8 i 0.05221C0 T.nw Nnign Fianna . NF = 1 BAR I-.v -(Vnm ..
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MT3S07T
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA MT3SO7T
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
MT3S07T
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
'fi'a, 1.2:005
. . M 0.820.05
0 Low Noise Figure : NF = 1.5 dB 'p)',.
(VCE=3V,IC=5mA,f=2GHz) _ oc:,',,''
_|_I; g
0 High Gain .' IS21e|2 = 9.5 dB i?,, 1 ci
(VCE = 3V, 1C = 15mA, f-- 2GHz)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 2
Collector-Base Voltage VCBO 10 V m tl::'::'',,
Co11eetor-Emitter Voltage VCEO 5 V acc,':' g
Emitter-Base Voltage VEBO 1.5 V 'e. CD
Collector Current IC 25 mA
Base Current IB 10 mA
Collector Power Dissipation PC 100 mW ; 'lt%,
Junction Temperature Tj 125 "C l' COLLECTOR
Storage Temperature Range Tstg -55--125 C JEDE C -
MARKING JEITA -
3 TOSHIBA 2-1B1A
TI Weight : 0.0022 g
MICROWAVE CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Transition Frequency fT VCE = 3 V, 10 = 10mA 10 12 - GHz
V = 1 V, I = 5mA,
IS21el2(1) fEEZ GHz C - 7.5 -
Insertion Gain IS F (2) VCE = 3 V, 1C = 15 mA, 6 5 9 5 dB
21e f = 2 GHz . . -
NF (1) KEEz al,,)'' IC = 5 mA, - 1.6 3
Noise Figure NF(2) VCE = 3V, 10 = 5 mA, 1 5 3 dB
f = 2 GHz - .
1 2001-12-10
TOSHIBA
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
MT3SO7T
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off
I = I = - - 1 A
Current CBO V03 5 V, E 0 0 p
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 - - 1 pdk
DC Current Gain hFE VCE = 1 V, 10 = 5 mA 70 - 140 -
Reverse Transfer VCB = 1 V, IE = o, f = 1 MHz
Capacitance Cre (Note) - 0.4 0.85 pF
(Note) : Cre is measured by 3 terminal method with capacitance bridge.
CAUTION
This device electrostatic sensitivity. Please handle with caution.
|821e|2 - IC IS21el2 - IC
INSERTION GAIN ISM}2 (dB)
COLLECTOR CURRENT 10 (mA)
f = 1 GHz
Ta = 25''C
|S21e|2 - VCE
INSERTION GAIN 1821912 (dB)
C0LLECT0R-EMITTER VOLTAGE VCE (V)
INSER’I‘ION GAIN Iszxel2 (dB)
50 100 1
3 5 10
30 50 100
COLLECTOR CURRENT 10 (mA)
INSERTION GAIN [32142 (dB)
10 0 2
IS21e|2 - VCE
6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA
MT3SO7T
NWGa (dB, TRANSITION FREQUENCY rT (GHz)
NOISE FIGURE / ASSOCIATION GAIN
REVERSE TRANSFER CAPACITANCE
Cre (PF)
f-- 1 GHz
14 Ta = 25''C
1 3 5 10 30 50 100
COLLECTOR CURRENT IC (mA)
NF/Ga - IC
-VCE=IV f=2GHz
---. VCE=3V Ta=25°C
1 3 5 10 30 50 100
COLLECTOR CURRENT IC (mA)
Cre - VCB
0 l 2 3 4 5 6
COLLECTOR-BASE VOLTAGE VCB (V)
TRANSITION FREQUENCY fT (GHZ)
MAXIMUM GAIN Ga(max) (dB)
3 5 10 30 50 100
COLLECTOR CURRENT IC (mA)
Ga (max) - IC
f = 2 GHz
Ta = 25°C
3 5 10 30 50 100
COLLECTOR CURRENT IC (mA)
TOSHIBA MT3SO7T
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-12-10
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