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MT3S03ATTOSHIBAN/a296000avaiTRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS


MT3S03AT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSMT3SO3ATTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TVHF-UHF BAND LOW NOISE AMPLIFIER APPLICATI ..
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MT3S03AT
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA MT3SO3AT
TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm
'fil, 1.2t0.05
0 Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) Q "Mj
o High Gain : Gain = 8 dB (at f = 2 GHz) - oc:,',,''
_|_I; I g
to - Q 1 o"
MAXIMUM RATINGS (Ta = 25°C) g. 3 o' - }
CHARACTERISTIC SYMBOL RATING UNIT ct o E 3
Collector-Base Voltage VCBO 10 V 'g-
Collector-Emitter Voltage VCEO 5 V
Emitter-Base Voltage VEBO 2 V g g!
Collector Current 10 40 mA 3 E
Base Current IB 10 mA g l o
Collector Power Dissipation PC 100 mW
Junction Temperature Tj 125 "C
Ct 1. BASE
Storage Temperature Range Tstg -55--125 C 2. EMITTER
3. COLLECTOR
MARKING
3 JEDEC -
|_I EIAJ -
M R TOSHIBA 2-IBIA
Ll Ll Weight : 0.0022 g
MICROWAVE CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
... fT(1) VCE=1V,Ic=5mA 5 7 -
Transition Frequency fT (2) VCE = 3 V, IC = 10 mA 7 10 - GHz
V = 1 V, I = 5mA,
|321el2(1) f Se, GHz C - 5.5 -
Insertion Gain IS I20) VCE = 3V, IC = 20 mA, 6 8 dB
21e f = 2 GHz -
NF (1) 2t alzv' IC = 5mA, - 1.7 3
Noise Figure NF (2) VCE = 3 V, IC = 7 mA, 1 4 2 2 dB
f = 2 GHz - . .
000707EAA2
O TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction
or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizin TOSHIBA
products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or
failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your desi ns, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent
TOSHIBA products speci ications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor
Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
o The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office
equipment, measuring1 equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for
usage in equipment t at requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic ener y control instruments, airplane or spaceship instruments, transportation
instruments, traffic signal instruments, combustion control instruments, me ical instruments, all types of safety devices, etc.. Unintended Usage of
TOSHIBA products listed in this document shall be made at the customer's own risk.
0 The information contained herein is presented only as a guide for the apflications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o The information contained herein is subject to change without notice.
2000-09-11 1/4
TOSHIBA
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
MT3SO3AT
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 5V, IE = 0 - - 0 1 PA
Emitter Cut-off Current IEBO VEB = 1 V, 10 = 0 - - 1 PA
DC Current Gain hFE VCE = 1 V, IC = 5mA 80 - 160 -
Reverse Transfer VCB = 1 V, IE = o, f = 1 MHz
Capacitance Cre (Note) - 0.75 LI PF
(Note) .' Cre is measured by 3 terminal method with capacitance bridge.
CAUTION
This device electrostatic sensitivity. Please handle with caution.
|821e|2 - IC IS21el2 - IC
INSERTION GAIN ISM}2 (dB)
1 3 5 10
COLLECTOR CURRENT IC (mA)
ISZIoel2 - VCE
INSERTION GAIN 182le (dB)
COLLECTOR-EMITTER VOLTAGE VCE (V)
INSERTION GAIN :32“? (dB)
3 5 10
30 50 100
COLLECTOR CURRENT IC (mA)
REVERSE TRANSFER CAPACITANCE
Cre (pF)
10 0 2
Cre - VCB
6 8 10
COLLECTOR-BASE VOLTAGE VCB (V)
2000-09-1 1 2/4
TOSHIBA
TRANSITION FREQUENCY {'1‘ (GHz)
OUTPUT LEVEL POUT (dBmW)
f = 2 GHz
Ta = 25''C
1 3 5 10 30 50 100
COLLECTOR CURRENT IC (mA)
POUT - PIN
10 2V/20mA
f = 1 GHz
Ta = 25"C
-40 -30 -20 -10 0 10 20
INPUT LEVEL PIN (dBmW)
NOISE FIGURE NF (dB)
(dBmW)
OUTPUT LEVEL POUT
MT3SO3AT
NF- IC
3 5 10 30 50 100
COLLECTOR CURRENT IC (mA)
POUT - PIN
2V/20mA
f= 2GHz
Ta = 25'C
-30 -20 -10 0 10 20
INPUT LEVEL PIN (dBmW)
2000-09-11 3/4
TOSHIBA MT3SO3AT
MT3SO3AT
VCE = IV, k: = 5mA, f = 100--2000MHz Step 100 MHz
frequency S11 S21 S12 S22 [821]2
(MHz) Mag. (°) Ang. (°) Mag. (°) Ang. (°) Mag. (°) Ang. (°) Mag. C') Ang. (°) (dB)
100 0.829 -42.09 13.97 152.75 0.044 67.95 0.872 -26.75 22.91
200 0.697 -74.86 11.12 131.99 0.071 55.16 0.695 -46.64 20.93
300 0.607 -98.64 8.78 119.37 0.086 48.94 0.548 -58.76 18.87
400 0.537 -116.18 7.10 110.48 0.095 46.46 0.442 -67.42 17.02
500 0.499 -130.11 5.91 103.78 0.102 45.94 0.372 -73.36 15.43
600 0.476 -140.68 5.05 98.73 0.109 46.82 0.320 -78.15 14.07
700 0.459 -149.97 4.42 94.75 0.116 47.94 0.283 -81.90 12.90
800 0.445 -157.67 3.93 91.11 0.123 49.17 0.255 -84.50 11.88
900 0.437 -164.71 3.55 88.00 0.130 50.80 0.233 -86.64 10.99
1000 0.430 -170.88 3.22 85.10 0.138 52.41 0.214 -88.82 10.17
1100 0.424 -176.25 2.96 82.46 0.146 53.41 0.202 -90.56 9.42
1200 0.421 179.03 2.76 80.09 0.154 54.93 0.191 -91.76 8.81
1300 0.413 174.76 2.59 77.80 0.163 56.15 0.181 -93.92 8.26
1400 0.414 170.58 2.43 75.44 0.172 57.35 0.174 -93.26 7.71
1500 0.408 166.41 2.29 73.26 0.181 57.94 0.172 -93.59 7.18
1600 0.407 162.15 2.18 71.49 0.191 59.12 0.165 -94.64 6.76
1700 0.400 158.83 2.08 69.51 0.201 59.83 0.163 -95.43 6.38
1800 0.395 155.08 2.00 67.45 0.213 60.20 0.166 -94.98 6.00
1900 0.394 152.17 1.91 65.71 0.224 60.47 0.167 -95.20 5.63
2000 0.391 148.78 1.85 63.69 0.234 60.42 0.166 -96.54 5.34
VCE = 2V, IC = 20 mA, f = 100--2000MHz Step 100MHz
frequency S11 S21 S12 S22 ls21l2
(MHz) Mag. (°) Ang. (°) Mag. (°) Ang. (°) Mag. (°) Ang. (°) Mag. (°) Ang. (°) (dB)
100 0.537 -80.38 30.70 132.46 0.027 62.04 0.622 -52.35 29.74
200 0.435 - 120.48 18.94 112.69 0.040 59.57 0.389 -76.84 25.55
300 0.400 - 142.77 13.32 104.00 0.051 62.40 0.276 -90.44 22.49
400 0.384 - 154.99 10.24 98.52 0.062 65.36 0.213 - 101.30 20.21
500 0.373 - 165.10 8.30 94.44 0.074 67.95 0.174 - 109.99 18.38
600 0.370 - 172.70 6.96 91.41 0.086 69.26 0.149 - 117.89 16.85
700 0.367 - 178.98 6.01 88.83 0.098 70.37 0.130 - 124.15 15.58
800 0.364 175.68 5.32 86.47 0.110 71.06 0.114 - 129.15 14.52
900 0.365 170.51 4.77 84.51 0.123 71.31 0.102 - 133.86 13.57
1000 0.363 165.94 4.30 82.50 0.136 71.64 0.092 - 138.99 12.67
1100 0.362 162.06 3.96 80.56 0.148 71.54 0.083 - 142.41 11.95
1200 0.356 158.37 3.66 78.86 0.162 71.29 0.074 - 144.85 11.28
1300 0.354 154.54 3.42 77.07 0.174 71.27 0.067 - 145.86 10.67
1400 0.347 150.55 3.19 75.49 0.188 70.88 0.059 - 144.94 10.09
1500 0.344 147.06 3.02 73.43 0.201 70.44 0.053 - 143.48 9.60
1600 0.341 143.15 2.85 72.09 0.214 70.07 0.046 - 142.20 9.09
1700 0.334 140.08 2.73 70.46 0.229 69.53 0.042 - 137.65 8.72
1800 0.329 136.43 2.61 68.56 0.242 68.74 0.042 - 124.50 8.33
1900 0.323 133.53 2.49 67.10 0.256 67.93 0.043 - 114.28 7.93
2000 0.320 131.09 2.40 65.14 0.269 66.91 0.044 - 110.52 7.61
2000-09-1 1 4/4
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