IC Phoenix
 
Home ›  MM161 > MSD6150,Dual Switching Diode Common Anode
MSD6150 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
MSD6150ONN/a41360avaiDual Switching Diode Common Anode
MSD6150MOTN/a42450avaiDual Switching Diode Common Anode


MSD6150 ,Dual Switching Diode Common AnodeMaximum Ratings as follows: P = 1.0 W @ T = 25°C,D CDerate above 8.0 mW/°C, P = 10 W @ T = 25°C, De ..
MSD6150 ,Dual Switching Diode Common Anode
MSG33002 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
MSK5232-1.8HTD , HIGH CURRENT, LOW DROPOUT SURFACE MOUNT VOLTAGE REGULATORS
MSL-174UYL , Surface Mount Chip LEDs
MSL-1947HB3 , Surface Mount Chip LEDs
MT4S03A ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2..0n0 Low Noise : Figure : NF = 1.4 dB0 High Gain : Gain = 9 dB (f = 2 GHz) ..
MT4S03AU ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2.1 i0.1Low Noise : Figure : NF = 1.4 dBHigh Gain : Gain = 9 dB (f = 2 GHz)1 ..
MT4S03BU ,Radio-frequency bipolar transistorElectrical Characteristics (Ta = 25°C) Characteristic Symbol Condition Min Typ. MaxUnitCollector cu ..
MT4S06 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2..0n(Vnm=3V, In=3mA, f-- 2GHz)I g e,retrrilr--i-'ti';lTThrh (19inV“ "' -I2= ..
MT4S06U ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2.1 i0.1O T.nw Nnign Fianna . NF = 1 RAR l Ac-?-!-'-'--?-; I(Vnm=3V, In=3mA, ..
MT4S100T ,TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES 1.2±0.05 Low Noise Figure :NF=0.72dB (@f=2GHz) 0.9±0.052 High Gain:|S21e| =17.0dB (@f= ..


MSD6150
Dual Switching Diode Common Anode
Dual Diode
Common Anode
MAXIMUM RATINGS (EACH DIODE)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C,
Derate above 8.0 mW/°C, PD = 10 W @ TC = 25°C, Derate above 80 mW/°C, TJ, Tstg = –55 to +150°C, θJC = 12.5°C/W, θJA = 125°C.
3 Anode
Cathode 1 2 Cathode
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED