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MSD6100RLRAMOTN/a1900avaiSmall Signal Dual Switch Diode


MSD6100RLRA ,Small Signal Dual Switch Diodehttp://onsemi.com2I , FORWARD CURRENT (mA)FC , DIODE CAPACITANCE (pF)DI , REVERSE CURRENTμ (A)RMSD6 ..
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MT4S03AU ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2.1 i0.1Low Noise : Figure : NF = 1.4 dBHigh Gain : Gain = 9 dB (f = 2 GHz)1 ..
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MT4S06 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2..0n(Vnm=3V, In=3mA, f-- 2GHz)I g e,retrrilr--i-'ti';lTThrh (19inV“ "' -I2= ..
MT4S06U ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2.1 i0.1O T.nw Nnign Fianna . NF = 1 RAR l Ac-?-!-'-'--?-; I(Vnm=3V, In=3mA, ..
MT4S100T ,TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES 1.2±0.05 Low Noise Figure :NF=0.72dB (@f=2GHz) 0.9±0.052 High Gain:|S21e| =17.0dB (@f= ..


MSD6100RLRA
Small Signal Dual Switch Diode
Dual Switching Diode
Common Cathode
MAXIMUM RATINGS (EACH DIODE)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C,
Derate above 25°C  8.0 mW/°C, TJ = –65 to +150°C, θJC = 125°C/W.
3 Cathode
Anode 1 2 Anode
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