| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MRFEP6BT-E3-45 |
VISHAY|Vishay |
N/a |
1500 |
 |
|
MRFG35003M6T1 ,MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRFG350 ..
MRFG35010 ,MRFG35010 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMTTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case Class A R ..
MRFG35010MT1 ,MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRFG350 ..
MRFIC0916 ,SILICON GENERAL PURPOSE RF CASCODE AMPLIFIER**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRFIC0916/DThe MRFIC Line* * The MRFIC0916 is ..
MRFIC1504R2 ,INTERGRATED GPS DOWNCONVERTERELECTRICAL CHARACTERISTICS (V = 2.7 to 3.3 V; T = –40 to 85°C; Enable = 2.7 V unless otherwise not ..
MT3S08T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSApplications Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB 2|S21e| = 10.5d ..
MT3S111 ,Radio-frequency SiGe Heterojunction Bipolar TransistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MT3S111P ,Radio-frequency SiGe Heterojunction Bipolar TransistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
