| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MRFE6S9200H |
FREESCALE |
N/a |
65 |
 |
|
MRFE6S9200HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9200HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9205HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFG35003M6T1 ,MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRFG350 ..
MRFG35010 ,MRFG35010 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMTTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case Class A R ..
MT3S06T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 Il 0.8 i 0.05221C0 T.nw Nnign Fianna . NF = 1 RAR I(Vnm=3V, ..
MT3S06T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSMT3506TTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TMTRQDETVHF-UHF BAND LOW NOISE AMPLIFIER
MT3S06U ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmZ1IU1O T.nw Nnign Fianna . NF = 1 RAR “1.25:0.1”(Vnm=3V, In=3mA, f-- 2GHz)TT ..
