| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MRF966 |
MOT|Motorola |
N/a |
126 |
 |
|
MRF9745T1 ,HIGH FREQUENCY POWER TRANSISTOR LDMOS FET**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF9745T1/D* **The RF Small Signal Line* * N–Ch ..
MRF9811T1 ,HIGH FREQUENCY GaAs FET TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF9811T1/D* **The RF Small Signal Line* **N–Ch ..
MRFE6S9125NBR1 , N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9200HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9200HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MT3S04AFS , VHF~UHF Band Low-Noise Amplifier Applications
MT3S04AT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 IPhhmhh C Shir.C ShirI .Ft-c StSCh I = -flMAXIMUM RATINGS (T ..
MT3S05T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSApplications Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB Excellent co ..
