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MRF9085LSR3MOTN/a3740avai880 MHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET


MRF9085LSR3 ,880 MHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF9085 ..
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MRF9085LSR3
880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
The RF Sub- Micron MOSFET Line
RF Power Field Effect T ransistorsN- Channel Enhancement- Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large-signal, common-source amplifier
applications in 26 volt base station equipment. Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mAIS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13Output Power — 20 WattsPower Gain — 17.9 dBEfficiency — 28% Adjacent Channel Power — 750 kHz: -45.0 dBc @ 30 kHz BW1.98 MHz: -60.0 dBc @ 30 kHz BW Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large-Signal Impedance Parameters Low Gold Plating Thickness on Leads, 40µ″ Nominal. In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS

(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
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