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MRF9080N/a19avaiMRF9080, MRF9080R3, MRF9080SR3, MRF9080LSR3 GSM 900 MHz, 75 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs


MRF9080 ,MRF9080, MRF9080R3, MRF9080SR3, MRF9080LSR3 GSM 900 MHz, 75 W, 26 V Lateral N-Channel Broadband RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.7 °C/ ..
MRF9080R3 ,RF POWER FIELD EFFECT TRANSISTORSOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9080/DThe RF Sub–Micron MOSFET Line ..
MRF9080SR3 ,RF POWER FIELD EFFECT TRANSISTORSMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V –0.5, ..
MRF9085 ,MRF9085, MRF9085R3, MRF9085SR3, MRF9085LSR3 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9085/DThe RF Sub–Micron MOSFET Line ..
MRF9085 ,MRF9085, MRF9085R3, MRF9085SR3, MRF9085LSR3 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF9085 ,MRF9085, MRF9085R3, MRF9085SR3, MRF9085LSR3 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
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MRF9080
MRF9080, MRF9080R3, MRF9080SR3, MRF9080LSR3 GSM 900 MHz, 75 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub–Micron MOSFET Line
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N–Channel Enhancement–Mode Lateral MOSFETs

Designed for GSM 900 MHz frequency band, the high gain and broadband
performance of these devices make them ideal for large–signal, common–
source amplifier applications in 26 volt base station equipment. Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55% Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
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