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MRF857S
NPN silicon RF power transistor
The RF Line- -
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800–960 MHz. Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics
Output Power = 2.1 Watts CW
Minimum Power Gain = 12.5 dB
Minimum ITO = +43 dBm
Typical Noise Figure = 5.25 dB Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800–960 MHz Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.3 Adc and Rated Output Power Will Withstand RF Input Overdrive of 0.4 W CW Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS(continued)
Order this document
by MRF857/D-
SEMICONDUCTOR TECHNICAL DATA
