MRF6522-70 ,MRF6522-70, MRF6522-70R3 921-960 MHz, 70 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6522–70/DThe RF MOSFET Line ..
MRF6522-70 ,MRF6522-70, MRF6522-70R3 921-960 MHz, 70 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 1.1 °C/ ..
MRF6522-70 ,MRF6522-70, MRF6522-70R3 921-960 MHz, 70 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6522–70/DThe RF MOSFET Line ..
MRF6522-70 ,MRF6522-70, MRF6522-70R3 921-960 MHz, 70 W, 26 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V ±20 Vd ..
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MRF6522-70
MRF6522-70, MRF6522-70R3 921-960 MHz, 70 W, 26 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line�� ����� ����� ������ � ����������
N–Channel Enhancement–Mode Lateral MOSFETsDesigned for GSM 900 frequency band, the high gain and broadband
performance of these devices make them ideal for large–signal, common
source amplifier applications in 26 volt base station equipment. Specified Performance @ Full GSM Band, 921–960 MHz, 26 Volts
Output Power, P1dB — 80 Watts (Typ)
Power Gain @ P1dB — 16 dB (Typ)
Efficiency @ P1dB — 58% (Typ) Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
