MRF6404 ,RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF6409 ,RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF641 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATA by MRF641/DThe RF Line ** *. . . designed for 12 ..
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MRF644 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATA by MRF644/DThe RF Line ** *. . . designed for 12 ..
MRF650 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF650/DThe RF Line ** *Designed for 12.5 Volt ..
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MRF6404
RF POWER TRANSISTOR NPN SILICON
The RF Line- -
The MRF6404 is designed for 26 volts microwave large signal, common
emitter, class AB linear amplifier applications operating in the range 1.8 to
2.0 GHz. Specified 26 Volts, 1.88 GHz Characteristics
Output Power — 30 Watts
Gain — 7.5 dB Min @ 30 Watts
Efficiency — 38% Min @ 30 Watts Characterized with Series Equivalent Large–Signal Parameters from
1.8 to 2.0 GHz To be used in Class AB for DCS1800 and PCS1900/Cellular Radio Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS(1) Thermal resistance is determined under specified RF operating condition.
Order this document
by MRF6404/D-
SEMICONDUCTOR TECHNICAL DATA
