MRF464 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATA by MRF464/DThe RF Line ** *. . . designed primar ..
MRF497 ,NPN SILICON RF POWER TRANSISTORMAXIMUM RATINGS(1)Thm dewce us designed for RF operatlon The total deerce dlssmanon rating applieso ..
MRF5003 ,N-CHANNEL BROADBAND RF POWER FET**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5003/DThe RF MOSFET Line** ** ** * ** *N–Cha ..
MRF5007 ,N-CHANNEL BROADBAND RF POWER FET**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET Line** ** ** * ** *N–Cha ..
MRF5015 ,N-CHANNEL BROADBAND RF POWER FETTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 3.5 °C/ ..
MRF5035 ,N-CHANNEL BROADBAND RF POWER FET**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5035/DThe RF MOSFET Line** ** ** * ** *N–Cha ..
MT28F400B5 , FLASH MEMORY
MT28F400B5 , FLASH MEMORY
MT28F800B3WG-9B , FLASH MEMORY
MT28F800B3WG-9B , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MRF464
RF POWER TRANSISTOR NPN SILICON
The RF Line- -.. designed primarily for applications as a high–power linear amplifier from 2.0
to 30 MHz, in single sideband mobile, marine and base station equipment. Specified 28 Volt, 30 MHz Characteristics —
Output Power = 80 W (PEP)
Minimum Gain = 15 dB
Efficiency = 40%
Intermodulation Distortion = –32 dB (Max)
MATCHING PROCEDUREIn the push–pull circuit configuration it is preferred that the transistors are
used as matched pairs to obtain optimum performance.
The matching procedure used by Motorola consists of measuring hFE at the
data sheet conditions and color coding the device to predetermined hFE ranges
within the normal hFE limits. A color dot is added to the marking on top of the
cap. Any two devices with the same color dot can be paired together to form a
matched set of units.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
ON CHARACTERISTICSNOTE: (continued)
