MRF338 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
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MRF338
BROADBAND RF POWER TRANSISTOR NPN SILICON
The RF Line --
Designed primarily for wideband large–signal output and driver amplifier
stages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz Characteristics
Output Power = 80 Watts
Minimum Gain = 7.3 dB
Efficiency = 50% (Min) Built–In Matching Network for Broadband Operation 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
(2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF338/D-
SEMICONDUCTOR TECHNICAL DATA
