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MRF329
BROADBAND RF POWER TRANSISTOR NPN SILICON
The RF Line- -.. designed primarily for wideband large–signal output and driver amplifier
stages in the 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics —
Output Power = 100 Watts
Minimum Gain = 7.0 dB
Efficiency = 50% (Min) Built–In Matching Network for Broadband Operation Using Double Match
Technique 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR Gold Metallization System for High Reliability
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
OFF CHARACTERISTICSNOTES: (continued) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
