MRF326 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF329 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF338 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF373A ,MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF373A/DThe RF MOSFET Line ..
MRF377 ,MRF377, MRF377R3, MRF377R5 470-860 MHz, 240 W, 32 V Lateral N-Channel RF Power MOSFET Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF377/ ..
MRF406 , NPN SILICON RF POWER TRANSISTOR
MT28F008B3VG-9T , FLASH MEMORY
MT28F016S5 , 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY
MT28F016S5VG-9 , 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY
MT28F128J3 , Q-FLASHTM MEMORY
MT28F128J3FS-12ET , Q-FLASHTM MEMORY
MT28F128J3FS-12ET , Q-FLASHTM MEMORY
MRF326
BROADBAND RF POWER TRANSISTOR NPN SILICON
The RF Line- -.. designed primarily for wideband large–signal output amplifier stages in the
100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc
Output Power = 40 Watts
Minimum Gain = 9.0 dB Built–In Matching Network for Broadband Operation 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICSNOTE: (continued)
