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MRF282SFREESCALEN/a1955avaiLATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF282SMOTN/a1918avaiLATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF282ZFREESCALEN/a13046avaiLATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF282ZMOTN/a2513avaiLATERAL N-CHANNEL BROADBAND RF POWER MOSFETs


MRF282Z ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V ±20 Vd ..
MRF282Z ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF284 ,MRF284R1, MRF284LSR1 2000 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF284/DThe RF Sub–Micron MOSFET Line ..
MRF2947 ,LOW NOISE TRANSISTORS**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF2947/DThe RF Line * ** **Motorola’s MRF2947 ..
MRF2947AT1 ,LOW NOISE TRANSISTORSMAXIMUM RATINGSRating Symbol Value UnitCollector–Emitter Voltage V 10 VdcCEOCollector–Base Voltage ..
MRF2947AT2 ,LOW NOISE TRANSISTORSMAXIMUM RATINGSRating Symbol Value UnitCollector–Emitter Voltage V 10 VdcCEOCollector–Base Voltage ..
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F016S5 , 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY


MRF282S-MRF282Z
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
The RF Sub–Micron MOSFET Line -
N–Channel Enhancement–Mode Lateral MOSFETs

Designed for class A and class AB PCN and PCS base station applications at
frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier
amplifier applications. Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts (PEP)
Power Gain = 11 dB
Efficiency = 30%
Intermodulation Distortion = –30 dBc Specified Single–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts (CW)
Power Gain = 11 dB
Efficiency = 40% Characterized with Series Equivalent Large–Signal
Impedance Parameters S–Parameter Characterization at High Bias Levels Excellent Thermal Stability Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts (CW) Output Power Gold Metallization for Improved Reliability
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Order this document
by MRF282/D
-
SEMICONDUCTOR TECHNICAL DATA
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