IC Phoenix
 
Home ›  MM159 > MRF281SR1-MRF281ZR1,RF POWER FIELD EFFECT TRANSISTORS
MRF281SR1-MRF281ZR1 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
MRF281SR1MOTN/a6avai2000 MHz, 4 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
MRF281ZR1FREESCALEN/a15avaiRF POWER FIELD EFFECT TRANSISTORS


MRF281ZR1 ,RF POWER FIELD EFFECT TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF282S ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF282/DThe RF Sub–Micron MOSFET Line** ** ** * ..
MRF282S ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 2.9 °C/ ..
MRF282Z ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V ±20 Vd ..
MRF282Z ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF284 ,MRF284R1, MRF284LSR1 2000 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF284/DThe RF Sub–Micron MOSFET Line ..
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F016S5 , 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY


MRF281SR1-MRF281ZR1
RF POWER FIELD EFFECT TRANSISTORS
The RF Sub–Micron MOSFET Line
�� ����� ����� ������ � ����������
N–Channel Enhancement–Mode Lateral MOSFETs

Designed for digital and analog cellular PCN and PCS base station
applications with frequencies from 1000 to 2500 MHz. Characterized for
operation Class A and Class AB at 26 volts in commercial and industrial
applications. Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts
Output Power — 4 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — –29 dBc Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 4 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters S–Parameter Characterization at High Bias Levels Available in Tape and Reel. R1 Suffix = 500 Units per
12 mm, 7 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED