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MRF21125SMOTN/a15avaiRF POWER FIELD EFFECT TRANSISTORS
MRF21125SR3FREESCALEN/a325avaiRF POWER FIELD EFFECT TRANSISTORS


MRF21125SR3 ,RF POWER FIELD EFFECT TRANSISTORSOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF21125/DThe RF Sub–Micron MOSFET Line ..
MRF21180 ,MRF21180, MRF21180S 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.46 °C ..
MRF247 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF247/DThe RF Line ** *The MRF247 is designed ..
MRF281 ,MRF281SR1, MRF281ZR1 2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF281/DThe RF Sub–Micron MOSFET Line ..
MRF281SR1 ,2000 MHz, 4 W, 26 V Lateral N–Channel Broadband RF Power MOSFETOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF281/DThe RF Sub–Micron MOSFET Line ..
MRF281ZR1 ,RF POWER FIELD EFFECT TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY


MRF21125S-MRF21125SR3
RF POWER FIELD EFFECT TRANSISTORS
The RF Sub–Micron MOSFET Line
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N–Channel Enhancement–Mode Lateral MOSFETs

Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications. Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1600
mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,
adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz
bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Output Power — 20 Watts
Efficiency — 18%
Gain — 13 dB
IM3 — –43 dBc
ACPR — –45 dBc 100% Tested under 2–carrier W–CDMA Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW)
Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
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