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MRF15060SMOTN/a147avaiRF POWER BIPOLAR TRANSISTORS


MRF15060S ,RF POWER BIPOLAR TRANSISTORS**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF15060/DThe RF Sub–Micron Bipolar Line* ** * ..
MRF15090 ,RF POWER TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF15090/D* **The RF Line** ** *Designed for 2 ..
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MRF15060S
RF POWER BIPOLAR TRANSISTORS
The RF Sub–Micron Bipolar Line -
Designed for broadband commercial and industrial applications at frequen-
cies from 1400 to 1600 MHz. The high gain and broadband performance of
these devices makes them ideal for large–signal, common–emitter class A and
class AB amplifier applications in 26 volt amplitude modulated and multi–carrier
base station equipment. Guaranteed Two–Tone Performance at 1490 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 10 dB
Efficiency — 33% Characterized with Series Equivalent Large–Signal Impedance Parameters S–Parameter Characterization at High Bias Levels Excellent Thermal Stability All Gold Metal for Ultra Reliability Capable of Handling 3:1 VSWR @ 26 Vdc, 1490 MHz, 60 Watts (PEP)
Output Power
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
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SEMICONDUCTOR TECHNICAL DATA
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