MPSA13RA ,NPN Darlington TransistorMPSA13 NPN Darlington TransistorFebruary 2005MPSA13NPN Darlington Transistor• This device is desig ..
MPSA13RA ,NPN Darlington Transistorapplications requiring extremely high Current gain at collector Currents to 1.0A.• Sourced from pro ..
MPSA13RLRAG , Darlington Transistors NPN Silicon
MPSA13ZL1G , Darlington Transistors NPN Silicon
MPSA14 ,Leaded Small Signal Transistor DarlingtonMAXIMUM RATINGSRating Symbol Value UnitCollector–Emitter Voltage V 30 VdcCESCollector–Base Voltage ..
MPSA14G , Darlington Transistors NPN Silicon
MSP-EXP430G2 , Starter Kit Evaluation Kit Manual
MSQ6411C ,0.56 INCH (14.2MM) FOUR DIGIT STICK DISPLAY0.56 INCH (14.2 MM)
FOUR DIGIT STICK DISPLAY
BRIGHT RED MSQS111C, MSQG141C
GREEN MSQ6411C, M ..
MSQ6441C ,0.56 INCH (14.2MM) FOUR DIGIT STICK DISPLAY0.56 INCH (14.2 MM)
FOUR DIGIT STICK DISPLAY
BRIGHT RED MSQS111C, MSQG141C
GREEN MSQ6411C, M ..
MSQA6V1W5 ,Quad Array for ESD Protection2P , PEAK SURGE POWER (WATTS)pk% OF PEAK PULSE CURRENTMSQA6V1W5T210010090908080707060 6050 50404030 ..
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MPSA13RA
NPN Darlington Transistor
MPSA13 NPN Darlington Transistor February 2005 MPSA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings T = 25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CES V Collector-Base Voltage 30 V CBO V Emitter-Base Voltage 10 V EBO I Collector Current - Continuous 1.2 A C T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage I = 100μA, I = 0 30 V (BR)CES C B I Collector-Cutoff Current V = 30V, I = 0 100 nA CBO CB E I Emitter-Cutoff Current V = 10V, I = 0 100 nA EBO EB C On Characteristics * h DC Current Gain V = 5.0V, I =10mA 5,000 FE CE C V = 5.0, I = 100mA 10,000 CE C V Collector-Emitter Saturation Voltage I = 100mA, I = 0.1mA 1.5 V CE (sat) C B V Base-Emitter On Voltage I = 100mA,V = 5.0V 2.0 V BE (on) C CE Small Signal Characteristics f Current Gain Bandwidth Product I = 10mA, V = 10V, f = 100MHz 125 pF T C CE * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% ©2005 1 MPSA13 Rev. B
