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MP6801
Power MOS FET Module Silicon N / P Channel MOS Type
TOSHIBA MP6801
TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE (LZ-n-MOSIV 6 IN 1)
MP6801]
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS
3-PHASE MOTOR DRIVE AND BIPOLAR DRIVE OF PULSE MOTOR. Unit 1n mm
31.5 $0.2
24.4i 0.2
1.7i0.1
4-Volt Gate Drive. 7.55
0 Package with Heat Sink Isolated to Lead. (SIP 12Pin)
10.0t0i5 16.11'0.
0 High Drain Power Dissipation. R
: PT=40W @Tc=25°C (6 Device Operation) _
DiBSiOJS
0 Low Drain-Source ON Resistance
: RDS(0N)=55mQ (Typ.) (N-ch)
90mQ (Typ.) (P-ch) ii i,
I' Ni”.
0 Low Leakage Current : IGSS= iloyA (Max.) (ENDS-- i16V t' 'r"'
annnnnnnunnu :L i
: IDSS=100#A (Max,) @VDs=60V (1 12’ i,
' - - - 2, 4, 6, 8, 9, 11 Gate
0 Enhancement-Mode . Vth--0.8 2.0V (MD--1tnA 3, 7, 10 Drain
1, 5, 12 Source
MAXIMUM RATINGS (Ta = 25 C) JEDEC -
CHARACTERISTIC SYMBOL NetT"f,e,, UNIT EIAJ -
Drain-Source Voltage VDSS 60 -60 V TOSHIBA 2-32B3A
Gate-Source Voltage VGSS i2() 1-20 V Weight : 6g
Drain Current ID 10 -10 A ARRAY CONFIGURATION
Peak Drain Current IDP 3O -30 o 5 o 12
Drain Power Dissipation
(1 Device Operation, Ta=25°C) PD 3.0 I- _ I
Drain Power Dissipation Ta=25°C PT 5.0 W 4 H} 6 b?ll i»:
(6 Devices Operation) Tc=25'C 40 1r--'o3 1reo7 E 40
Channel Temperature Teh 150 C 2 'r-a 8 i-7 9o i-7
Storage Temperature Range Tstg -55--150 "C I I I
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance of Junction to Ambient . o
(6 Devices Operation, Ta=25°C) ERu, (j-a) 25 C/W
Thermal Resistance of Junction to Case o
(6 Devices Operation, Tc=25°C) ZRth (i-e) 3.12 C/W
Maximum Lead Temperature for Soldering Purposes T 260 "C
(3.2mm from Case for 10s) L
This transistor is an electrostatic sensitive device. Please handle with caution.
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
1997-04-11 1/9
TOSHIBA MP6801
ELECTRICAL CHARACTERISTICS (Ta=25°C) (N-ch MOS FET)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS-- i16V, VDS=0 - - $10 pzA
Drain Cut-off Current IDSS VDS=60V, Vgs=0 - - 100 PA
Drain-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0 60 - - V
Gate Threshold Voltage Vth VDs=10V, ID-- lmA 0.8 - 2.0 V
Forward Transfer Admittance Istl VDs=10V, ID=5A 5 11 - S
Drain-Source ON Resistance RDS(ON) ID=5A, VGS=4V - 80 115 n
Drain-Source ON Resistance RDS(ON) ID=5A, VGS=10V - 55 80
Input Capacitance Ciss - 750 -
Reverse Transfer Capacitance Crss VDS=10V, VGs=O, f = 1MHz - 170 - pF
Output Capacitance Cogs - 450 -
Rise Time tr 10V ID=5A - 60 -
VIN - _ V
Turn-on Time ton 0 3*; g OUT - 80 -
Switching Time 10ps , ns
Fall Time tf VDD'=.30V - 150 -
VIN : tr, tf<5ns
Turn-off Time toff Dug 1% (ZOUT=50n) - 400 -
Total Gate Charge Q 30
(Gate-Source Plus Gate-Drain) g 1n=10A, VGS=10V - -
Gate-Source Charge Qgs VDD:48V - 20 - nC
Gate-Drain ("Miller") Charge di - 10 -
SOURCE-DRAIN DIODE RATING AND CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain Reverse Current IDR - - - -10 A
Peak Drain Reverse Current IDRP - - - -30 A
Diode Forward Voltage VDSF IDR=10A, VGS=0 - -1.0 -1.7 V
Reverse Recovery Time trr IDR=10A, VGS=0 - 110 - ns
Reverse Recovery Charge er dIDR/ dt= -50A/ ps - 0.27 - PC
96100IEAA2'
o The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o The information contained herein is subject to change without notice.
1997-04-1 1
TOSHIBA MP6801
ELECTRICAL CHARACTERISTICS (Ta=25°C) (P-ch MOS FET)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS-- i16V, VDS=0 - - k10 pzA
Drain Cut-off Current IDSS Vns-- -60V, Vgs=0 - - -100 PA
Drain-Source Breakdown Voltage V(BR) DSS ID-- - 10mA, Vgs=0 -60 - - V
Gate Threshold Voltage Vth V133: -10V, ID-- -LnA -0.8 - -2.0 V
Forward Transfer Admittance lstl V133: -10V, ID-- -5A 3.5 8.0 - S
Drain-Source ON Resistance RDS (ON) ID-- -5A, VGS= -4V - 145 200 n
Drain-Source ON Resistance RDS (ON) ID: -5A, Vgs= -10V - 90 125
Input Capacitance Ciss V V V - 1200 -
. DS=-10 , GS--0,
Reverse Transfer Capacitance Crss f=1MHz - 220 - pF
Output Capacitance Cogs - 550 -
Rise Time tr 0 U10” ID-- -5A - 60 -
Turn-on Time ton - 10V Cl g OUT - 80 -
Switching Time 3 ns
Fall Time tf VDD: -30V - 120 -
. VIN : tr, tf<5ns
Turn-off Time toff Du.S 1% (ZOUT=50n) - 350 -
Total Gate Charge Q 45
(Gate-Source Plus Gate-Drain) g In-- - 10A, Has-- -10V - -
Gate-Source Charge Qgs VDD = -48V - 30 - nC
Gate-Drain ("Miller") Charge di - 15 -
SOURCE-DRAIN DIODE RATING AND CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain Reverse Current IDR - - - -10 A
Peak Drain Reverse Current IDRP - - - -30 A
Diode Forward Voltage VDSF IDR-- -10A, VGs=O - -0.9 - 1.7 V
Reverse Recovery Time trr IDR= -10A, VGS=0 - 110 - ns
Reverse Recovery Charge Qrr dIDR/ dt=50A/ ps - 0.18 - PC
1997-04-1 1
TOSHIBA
MP6801
ID - VDS
COMMON SOURCE
Tc=25°C
Vgs=2V
0 2 4 6 e 10 12
DRAIN-SOURCE VOLTAGE VDs (V)
In - VGS
COMMON SOURCE
VDS=10V
E Tc=100°C
0 1 2 3 4 5 6
GATE-SOURCE VOLTAGE VGS (VI
RDS (0N) - ID
COMMON SOURCE
Tc = 25''C
Rns<0m (0)
DRAINvSOURCE 0N RESISTANCE
1 3 10 30 100
DRAIN CURRENT ID (A)
FORWARDTRANSFER ADMITTANCE ”('5' (S) DRAIN CURRENT ID (A)
DRAIN-SOURCE 0N RESISTANCE
Rns<0N) (9)
ID - VDS
COMMON SOURCE
Tc = 25°C
Vgs=2V
0 0.4 0.8 1.2 1.6
DRAIN-SOURCE VOLTAGE VDS (V)
2.0 2.4
lstl - ID
COMMON SOURCE
VDS = 10V
Tc = - 55°C
0.1 0.3 1 3 10 20
DRAIN CURRENT ID (A)
RDS (0N) - Te
COMMON SOURCE
- 80 - 40 0 40 80 120 160
CASE TEMPERATURE Tc (°C)
1997-04-1 1 4/9
TOSHIBA MP6801
IDR - VDS CAPACITANCE - VDS
2 sz=1ov COMMON SOURCE 3000
M Tc=25°C
m g 300
M o 100
E COMMON SOURCE
g o, -1 VGS=0
Q f=1MHz
30 Tc--25''C,
. 0 0.4 0.8 1.2 1.6 2.0 2.4 0.1 0.3 1 3 10 30 100
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
VDS - VGS Vth - Te
COMMON SOURCE ' COMMON SOURCE
VDS: 10v
Tc=25°C ID=lmA
DRAlN-SOURCE VOLTAGE VDS (V)
GATE TIIRESI [OLD VOLTAGE Vth
0 4 8 12 16 20 24 -80 -40 0 40 80 120 160
GATE-SOURCE VOLTAGE VGS (VI CASE TEMPERATURE Tc CC)
1997-04-1 1 5/9
TOSHIBA
ID - VDS
- COMMON SOURCE
El Tc=25°C
VGs---2.0V
o -0.4 -0.8 -1.2 -1.6 -2.0 -2.4
DRAIN-SOURCE VOLTAGE vDs (V)
In - VGS
COMMON SOURCE
VDS=-10V
0 - 1 - 2 - 3 - 4 - 5
GATE-SOURCE VOLTAGE VGS xv:
RDS (0N) - ID
COMMON SOURCE
Tc = 25''C
DRAINSOURCE 0N RESISTANCE
Rns<0m (0)
-t -3 -5 -10 -30 -50 -100
DRAIN CURRENT ID (A)
FORWARDTRANSFER ADMITTANCE IYfSI (S) DRAIN CURRENT ID (A)
DRAIN-SOURCE 0N RESISTANCE
Rns<0N) (9)
MP6801
ID - VDS
COMMON SOURCE
Tc = 25°C
VGS=-2.0V
0 -2 -4 -6 -8 -10 -12
DRAIN-SOURCE VOLTAGE vDs (V)
lstl - ID
COMMON SOURCE
VIys---10V
-0.1 -0.3 -1 -3 -10 -20
DRAIN CURRENT ID (A)
RDS (0N) - Te
COMMON SOURCE
- 80 - 40 0 40 80 120 160
CASE TEMPERATURE Tc (°C)
1997-04-1 1 6/9
TOSHIBA
MP6801
IDR - VDS
2 COMMON SOURCE
M 10 Tc=25 C
0 0.2 0.4 0.6 0.8 1.0 1.2
DRAIN-SOURCE VOLTAGE VDS (V)
VDS (0N) - VGS
COMMON SOURCE
Tc = 25°C
DRAIN-SOURCE VOLTAGE VDS (V)
0 -4 -8 -12 -16 -20 -24
GATE-SOURCE VOLTAGE VGS (VI
CAPACITANCE C
GATE THRESHOLD VOLTAGE Vth (V)
CAPACITANCE _ VDS
COMMON SOURCE
f=lMHz
Tc=25°C
-0.1 -0.3 -1 -3 -10 -30 -100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth - Tc
COMMON SOURCE
Vps= -10ir
ID-- - lmA
-80 -40 0 40 80 120 160
CASE TEMPERATURE Tc CC)
1997-04-1 1 7/9
TOSHIBA
MP6801
SAFE OPERATION AREA (N-eh)
SAFE OPERATION AREA (P-eh)
I MAX.
DP -30
E E -10
E tie,'
a D -5
< < -3
.)k. SINGLE NONREPETITIVE .)k. SINGLE NONREPETITIVE
PULSE Tc=25°C PULSE T0=25°C
CURVES MUST BE DERATED -l CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN LINEARLY WITH INCREASE IN
0 TEMPERATURE. VDSS MAX. 0 5 TEMPERATURE. VDSS MAX.
.5 - .
0.5 1 3 5 10 30 60 100 _0.5 -1 -3 -6 -10 -30 -50 -100
DRAIN-SOURCE VOLTAGE VDs (V) DRAIN-SOURCE VOLTAGE vDs (V)
rth - tw
M 300 BELOW FIGURE SHOW THERMAL RESISTANCE PER
g 1 UNIT VERSUS PULSE WIDTH.
< 100 THIS CURVE IS OBTAINED USING SINGLE
ti N0NREPETITIvE PULSE WITH NO HEAT SINK AND
a 30 ATTACHED ON A CIRCUIT BOARD. -
Iii, CL 1 DEVICE OPERATION /
Fj5, 10 Ir) 2 DEVICES OPERATION r.erFse.
iiiFl 3) 3 DEVICES OPERATION g + l
g = (g) 6 DEVICES OPERATION - - -
F. r 3 'tt k
- N-ch e.71T
a . [z
E 1 P-ch . . - .
g l Ull u
E 0.3 CIRCUIT BOARD -
0.1 IHIIHH llll
0.001 0.01 0.1 1 10 100 1000
PULSED WIDTH tw (s)
1997-04-1 1 8/9
TOSHIBA MP6801
PT - Ta ATj - PT
g ATTACHED ON A CIRCUIT 5g
- BOARD <1
E C) 1 DEVICE OPERATION g (l? (if) (ij'. (g
6 :2) 2 DEVICES OPERATION a 120 ' ’
g M') (5) 3 DEVICES OPERATION l' / /
E ‘j; T s DEVICES OPERATION g
g \3/ 'ss 'GG / 7
H "s gu /
a 4 - 2) "Ns 'N wo .-, 80 f CIRCUIT BOARD
D Nh E: J'
E Cf) "s, 1sire:: {g V ATTACHED ON A CIRCUIT
t . "s. tts. CIRCUIT BOARD ts BOARD
tk 2 "N mA 2 40 CC) 1 DEVICE OPERATION
'd: "ss" t Cts) 2 DEVICES OPERATION
g Sc 5, Ci) 3 DEVICES OPERATION
- ’1 G) 6 DEVICES OPERATION
00 40 so 120 160 200 0o 2 4 6 s 10
AMBIENT TEMPERATURE Ta CC) TOTAL POWER DISSIPATION PT (W)
1997-04-1 1 9/9
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