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MP6501TOSHIBAN/a20avaiNPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MP6501ATOSN/a47avaiNPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)


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MP6501-MP6501A
NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
TOSHIBA MP6501A
TOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
MPti50'ilA
HIGH POWER SWITCHING APPLICATIONS Unit in mm
MOTOR CONTROL APPLICATIONS am”
0 The Electrodes are is Isolated from Case.
0 6 Darlington Transistor Built Into in 1 Package
0 High Input Impendance
10.5 2710.5
0 High DC Current Gain
; hFE=100 (Min.) (IC=15A)
0 Low Saturation Voltage
: VCE (sat)=2.1V (Max.) (Ic= 15A)
1. (+) 2. BU 3. U 4. EV
5. V 6. BW 7.W 8. BX
9. BY 10. B2 11.(-)
JEDEC -
EIAJ -
TOSHIBA 2-78A1A
Weight : 44g
EQUIVALENT CIRCUIT
Buo--tl,,, BV o-ii, 1: BW h"
Bxo--t, BYo--i(, Bzo--i(1
t "gt t 1: t h"
96100IEAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the resppnsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property, In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
o The information contained herein is presented only as a guide for the ap lizations of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o The information contained herein is subject to change without notice.
1997-08-21 1/5
TOSHIBA MP6501A
MAXIMUM RATINGS (Ta =25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 500 V
Col1ector-Emitter Sustaining Voltage CEX (SUS) V
VCEO (SUS) 400
Emitter-Base Voltage VEBO 6 V
DC 1C 15
Collector Current lms ICP 30 A
DC IF 15
Forward Current lms IFM 30 A
Base Current IB 1.0 A
Collector Power Dissipation PC 60 W
Junction Temperature Tj 150 T
Storage Temperature Range Tstg -40--125 T
Isolation Voltage V1801 2500 (AC 1Min.) V
Screw Torque - 1.5 Nun
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-Off Current ICBO VCB=500V, IE=0 - - 1.0 mA
Emitter Cut-Off Current IEBO VBE=6V, 10:0 - - 100 mA
Collector-Emitter Sustaining Voltage VCEO(SUS Ic=0.5A, L=40mH 400 - - V
LC Current Gain hFE VCE=5V, 10:15A 100 - -
Colleetor-Emitter Saturation Voltage VCE (sat) 10:15A, IB=O.4A - 1.3 2.1 V
Base-Emitter Saturation Voltage VBE (sat) IC--15A, IB=0.4A - 2.0 2.5 V
OUTPUT
Turn-On Time ton INPUT a - 0.6 LO
1131 50gs N
Switching Time Storage Time tstg 0% I - 5 12 [us
B2 VCC =300V
Fall Time tf IBl= -IB2--0.4A - 1.5 3.0
DUTY CYCLE =0.5%
Forward Voltage VF IF=15A, IB=O - 1.5 2.0 V
. IF=15A, VBE= -2A
Reverse Recovery Time trr di / dt= 60A /ps - - 0.7 gs
Thermal Resistance Rth Que) - - - 2.08 "C/ W
TOSHIBA
MP6501A
DC CURRENT GAIN hFE
COLLE CTOR CURRENT lg
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
Tc: 125'C
COMMON EMITTER
VCE=5V
0.1 1 10 100
COLLECTOR CURRENT 10 (A)
/ " - - - -
fft.'5. "1 1. 's
= ..- - - - .
_ N _ ..-
13 =0.01A ..-
Tc=25°C
COMMON EMITTER
COLLECTOR-EMITTER VOLTAGE VCE (V1
VCE - IB
COMMON
EMITTER
Tc = 125°C
10 100 1000
BASE CURRENT IB (mA)
DC CURRENT GAIN hm;
COLLECTOR-EMITTER VOLTAGE VCE
COLLEC’I‘OR-EMITTER VOLTAGE VCE (V)
hFE - IC
Tc = 1 25''C
COMMON EMITTER
1 10 100
COLLECTOR CURRENT 10 (A)
VCE - IB
COMMON EMITTER
Tc=25°C
10 100 1000
BASE CURRENT 13 (mA)
VCE - IB
COMMON EMITTER
Tc = - 40°C
10 100 1000
BASE CURRENT IB (mA)
1997-08-21 3/5
TOSHIBA MP6501A
IC - VBE(sat) 1F - VF
MM EMl'I'I‘E
ON R COMMON CATHODE
_ = AA _
S B 0 s IB=0
S? Je 24 /
ii, a f
.. ttt 1
D b' t6 /
0 o Tc=l25°C //
5 t2 .
a Tc=125°C pd l / l
'53 a 8 25''C I
..2 ttd ‘1 7
8 E (,/)
25°C //7 -4ty'C
0 ,/ I
0 0.8 1.6 2.4 3.2 4 0 0.5 1 1.5 2 2.5 3
BASE-EMITTER SATURATION VOLTAGE FOWARD VOLTAGE " (V)
VBE(sat) (V)
SWITCHING TIME - IC
SWITCHING TIME - -IB
w a 10
t 1131:0411 - 25°C a
IB2---0.4A - 1 g
I =0.4A
VCC=300V m 0.1 121:1.“
COMMON EMrNER - 25 l VCC=300V
0 2 4 6 s 10 12 14 16 125 COMMON EMITTER
COLLECTOR CURRENT 10 (A) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
BASE CURRENT -I (A)
SAFE OPERATING AREA B
100 1 111111 1111 111111
IC MAX.(PULSED)k1(. 00”: -10psryi
Q I l lllll , _ \ REVERSE BIAS SOA
- I I I 1 ll I "N , A
S? 10 IC MAX. _ _ 5
CONTINUOUS , 1
E ( Ill ) 10msik l lrns)K S?
_ ll I 1 I I 1 ll \ 1
g 1 1?? OTR,A,TPN \ 5
o X SINGLE 'h, t 's, g
5 NONREPETITIVE l B
S PULSE (Tc=25''C) l 1 \ M
E 0.1 CURVES MUST BE l ', ", 8 TIGI25t
d DERATED LINEARLY 1 's, , a I]: 0 8A
Ul WITH INCREASE IN , l l 3 B2= _ '
8 VBE= -6V
0.01 TEMPERATURE l
0.1 1 10 100 1000 1 10 100 1000
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EVER VOLTAGE VCE (V)
1997-08-21 4/5
TOSHIBA MP6501A
Rth (t) - tw
TRANSIENT THERMAL RESISTANCE
Rum) <°CIW>
.001 0.01 0.1 1 10
PULSE WIDTH tw (s)
1997-08-21 5/5

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