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MP6404
Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 6 in 1) High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications
MP6404 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (L2 -π-MOSV 6 in 1)
MP6404 High Power High Speed Switching Applications
3-Phase Motor Drive and Stepping Motor Drive Applications 4 V gate drive Small package by full molding (SIP 12 pin) High drain power dissipation (6 devices operation)
: PT = 36 W (Tc = 25°C) Low drain-source ON resistance: RDS (ON) = 120 mΩ (typ.) (Nch) 160 mΩ (typ.) (Pch) High forward transfer admittance: |Yfs| = 5.0 S (typ.) (Nch) 4.0 S (typ.) (Pch) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 0.8 V to 2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C) Note 1: Avalanche energy (single pulse) applied condition
Nch: VDD = 25 V, starting Tch = 25°C, L = 7 mH, RG = 25 Ω, IAR = 5 A
Pch: VDD = −25 V, starting Tch = 25°C, L = 14.84 mH, RG = 25 Ω, IAR = −5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature.
Industrial Applications
Unit: mm
Weight: 3.9 g (typ.)
