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MP4703
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
TOSHIBA MP4703
TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE (LZ-n-MOSIV 4 IN 1)
MP4703
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS.
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD
SWITCHING.
INDUSTRIAL APPLICATIONS
Unit in mm
31.5t0.2
o 4-Volt Gate Drive
0 Package with Heat Sink Isolated to Lead (SIP 12 Pin)
0 High Drain Power Dissipation (4 Devices Operation)
'. PT=36W(Tc=25°C)
It Low Drain-Source ON Resistance : RDS(0N)=0.200 (Typ.) M (f,
0 Low Leakage Current .' IGSS= -k10/Lt(Max.) (VGS= i'IGV) ii. 2 'i':'
1nss=100pA(Max.) (VDs=120V) (a-----)---
o Enhancement-Mode : Vth=0.8~2.0V(ID=1mA) 1 12
MOST FET DIODE
MAXIMUM RATINGS (Ta=25°C) l, 5, 8, 12 GATE 2, 4, 9, 11
24.4 10.2
10J III3.2
181:0.2
085:0.15
2clrj.iiii,iiii--tc"
2,4,9, ll DRAIN
CHARACTERISTIC SYMBOL RATING UNIT 6, 7 SOURCE 3, 10 CATHODE
Drain-Source Voltage VDSS 120 V 'elf, C
Gate-Source Voltage VGSS uF20 V -
. TOSHIBA 2-32B1G
Drain Current ID 5 A W . h 6
Peak Drain Current IDP 10 A e1g t . .Og
Drain Power Dissipation
(1 Device Operation) PD 3.0 W
Drain Power Dissipation T322500 5.0
. . PDT W
(4 Devices Operation) Tc=25°C 36
Channel Temperature Teh 150 T
Storage Temperature Range Tstg -55-150 T
ARRAY CONFIGURATION
g 10 11
8 !E3 12
TOSHIBA MP4703
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance of Channel to Ambient 0
(4 Devices Operation, Ta=25°C) ERth(ch-a) 25 C/W
Thermal Resistance of Channel to Case 0
(4 Devices Operation, Tc=25°C) ERth(ch-e) 3.47 C/W
Maximum Lead Temperature for Soldering Purposes TL 260 "C
(3.2mm from Case for 10s)
This Transistor is an Electrostatic Sensitive Device. Please Handle with Caution.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS= i16V, VDS=0 - - i10 PA
Drain Cut-off Current IDSS Vps=120V, VGS=0 - - 100 PA
Drain-Source Breakdown - -
Voltage V(BR)DSS ID=10mA, VGS=0 120 - - V
Gate Threshold Voltage Vth Vns=10V, ID=1mA 0.8 - 2.0 V
Forward Transfer Admittance Istl V133: 10V, ID=2.5A 2.0 4.0 - S
R I =2.5A, V =4V - 0.28 0.44
Drain-Source ON Resistance DS (ON) D GS n
RDS (ON) ID=2.5A, Vgs= 10V - 0.20 0.30
Input Capacitance Ciss - 540 -
Reverse Transfer Capacitance Crss VDs=10V, Vgs=0, f = 1MHz - 47 - pF
Output Capacitance Coss - 180 -
Rise Time tr ID.=_2-5AV - 15 -
. 10V n VIN cl OUT
Switching Turn-on Time ton 0 H g g - 50 - ns
Time Fall Time tf 10ps . - 40 -
VDD=.60V
. VIN : tr, tf<5ns
Turn-off Time toff Du.S 1% (ZOUT=50n) - 280 -
Total Gate Charge Q - 27 -
(Gate-Source Plus Gate-Drain) g I 5A V 10V V 96V C
= , = ' = n
Gate-Source Charge Qgs D GS DD - 18 -
Gate-Drain ("Miller") Charge di - 9 -
2 2001-05-24
TOSHIBA MP4703
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain Reverse Current IDR - - - 5 A
Peak Drain Reverse Current IDRP - - - 10 A
Diode Forward Voltage VDSF IDR = 5A, VGS = 0 - - 1.0 - 1.5 V
Reverse Recovery Time trr IDR-- 5A, VGS = 0 - 180 - ns
Reverse Recovery Charge er dIDR/ dt= -50A/ #5 - 0.54 - pd?
FLYBACK-DIODE RATINGS CHARACTERISTICS (Ta =25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Current IFM - - - 5 A
Reverse Current IR VR = 120V - - 0.4 PA
Reverse Voltage VR IR = 100 PA 120 - - V
Forward Voltage VF IF = 2A - - 2.3 V
3 2001-05-24
TOSHIBA
ID (A)
DRAIN CURRENT
ID (A)
DRAIN CURRENT
DRIN-SOURCE VOLTAGE VDS (V)
ID - VDS
COMMON 10
SOURCE
Tc=25°C 8
V =2.2V
0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
COMMON
SOURCE
VDS = 1 0V
1 2 3 4 5 6
GATE-SOURCE VOLTAGE VGS (V)
VDS - VGS
COMMON
SOURCE
Te = 25°C
4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
In (A)
DRAIN-SOIgglsl‘iOONl‘; R(FgISTANCE DRAIN CURRENT
DRAIN—SOURCE 0N RESISTANCE
RDS<0N> (9)
MP4703
ID - VDS
COMMON SOURCE
Tc = 25°C
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
RDS (ON) - ID
COMMON SOURCE
Tc = 25°C
.0.1 0.3 0.5 1 3 5 10 20
DRAIN CURRENT ID (A)
RDS (ON) - Te
0.8 COMMON SOURCE
- 80 - 40 0 40 80 120 160
CASE TEMPERATURE Te (°C)
TOSHIBA
GATE THRESHOLD VOLTAGE Vth (V)
FORWARD TRANSFER ADMITTANCE
ersl (3)
DRAIN REVERSE CURRENT IDR (A)
Vth - Te
COMMON
SOURCE
4 VDS = 1 0V
ID = 1 111A
-80 -40 0 40 80 120 160
CASE TEMPERATURE Te (°C)
lstl - ID
COMMON
SOURCE
VDS= 10V Tc=-55'C
0.1 0.3 0.5 1 3 5 10
DRAIN CURRENT ID (A)
IDR - VDs
COMMON SOURCE
1 VGs=0, -IV
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE C ([11?)
MP4703
DYNAMIC INPUT / OUTPUT
160 CHARACTERISTICS 1 6
COMMON
SOURCE
ID = 5A
Te = 25°C
0 10 20 30 40
TOTAL GATE CHARGE Qg (nC)
CAPACITANCE - VDS
COMMON
SOURCE
30 VGS=0
r: IMHz
Te = 25°C
0.3 1 3 10 30 100
DRAIN-SOURCE VOLTAGE VDS (V)
GATESOURCE VOLTAGE VGS (V)
TOSHIBA
DRAIN CURRENT
rth - tw
MP4703
BELOW FIGURE SHOW THERMAL
RESISTANCE PER 1 UNIT VERSUS PULSE
SINGLE NONREPETITIVE PULSE WITH NO
100 WIDTH. THIS CURVE IS OBTAINED BY USING
(0 HEAT SINK AND ATTACHED ON A CIRCUIT ’;
'-" 50 . b
g; BOARD. " v' "
Iss 30 Cf) 1 DEVICE OPERATION / " ./ \ CP) _
's. C27 2 DEVICES OPERATION 1.,,..e.e...--" Yt
'tis T, 3 DEVICES OPERATION 4.4!»! $3 _
gv 10 Cf) 4 DEVICES OPERATION _-..- l (IO E
:r: :5 5 gr (D cr
F 3 " I I
a " (a (a
[ig' "rs'-''"'''
g " l w ll
F 5 of CIRCUIT BOARD
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
SAFE OPERATING AREA PT - Ta
g ATTACHED ON A CIRCUIT
- BOARD
E. co 1 DEVICE OPERATION
tk Ca) 2 DEVICES OPERATION
IDP MAX. (PULSED) a 6 CO 3 DEVICES OPERATION
1 2 co Cd) 4 DEVICES OPERATION
2 CO F,
ID MAX. it,, hh
'r.tl "e 's, "s,
c: "ts.
g "s, "ce:,
t co 'tsa, CIRCUIT BOARD
W. n _
100msy.4 a. 4 's, "R
o 40 80 120 160 200
0 AMBIENT TEMPERATURE Ta (°C)
ATj - PT
0.3 160
X SINGLE NONREPETITIVE 5 C) © 3 4
PULSE Tc=25°C p; 120 ' '
0.1 CURVES MUST BE DERATED M / /
LINEARLY WITH INCREASE IN g A /,
TEMPERATURE. VDSS MAX. 553 / //
. E .H 80 I CIRCUIT BOARD
5 10 30 50 100 200 E: sf
DRAIN-SOURCE VOLTAGE VDS (V) E ’/ ATTACHED ON A CIRCUIT
ti 40 BOARD
a CO 1 DEVICE OPERAITON
3 s 2 DEVICES OPERATION
iii O) 3 DEVICES OPERATION
CO 4 DEVICES OPERATION
2 4 6 8 10
TOTAL POWER DISSIPATION PT (W)
TOSHIBA MP4703
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
7 2001-05-24
www.ic-phoenix.com
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