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Partno	Mfg	Dc	Qty	Available	Descript
MP4301	TOSHIBA ?	N/a	416	avai	Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
MP4301. |MP4301	TOS	N/a	458	avai	Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.

MP4301. ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 ..
MP4303 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.MP4303 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 ..
MP4303. ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 28 ..
MP4304 ,Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 28 ..
MP4305 ,Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 28 ..
MP4403 ,TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPEAPPLICATIONSHAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD Unit 1n mmSWITCHING. l l2IR+n ,4-Vol ..
MSM6100 , MSM6100
MSM6100 , MSM6100
MSM6100 , MSM6100
MSM-6100 , MSM6100
MSM6250 , CHIPSET SOLUTION
MSM-6250 , CHIPSET SOLUTION

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MP4301-MP4301.
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1)
MP4301
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation)
: PT = 4.4 W (Ta = 25°C) High collector current: IC (DC) = 3 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1.5 A)
Maximum Ratings (Ta = 25°C) Tstg
Array Configuration
Unit: mm
Weight: 3.9 g (typ.)
R1 R2
R1 ≈ 4.5 kΩ R2 ≈ 300 Ω 8
2 3 10 49 11

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