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MP4212TOSHIBAN/a1617avaiPower MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch Driver
MP4212TOSHIBA ?N/a1617avaiPower MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch Driver


MP4212 ,Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch DriverApplications Unit: mmH-Switch Driver  4 V gate drive  Small package by full molding (SIP 10 ..
MP4212 ,Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch DriverElectrical Characteristics (Ta = 25°C) (Nch MOS FET) Characteristics Symbol Test Condition Min Typ. ..
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MP4212
Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch Driver
MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (L2 -π-MOSV 4 in 1)
MP4212

High Power High Speed Switching Applications
H-Switch Driver 4 V gate drive Small package by full molding (SIP 10 pin) High drain power dissipation (4 devices operation)
: PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 120 mΩ (typ.) (N-ch) 160 mΩ (typ.) (P-ch) High forward transfer admittance: |Yfs| = 5.0 S (typ.) (Nch) 4.0 S (typ.) (Pch) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)

Note 1: Avalanche energy (single pulse) applied condition
Nch: VDD = 25 V, starting Tch = 25°C, L = 7 mH, RG = 25 Ω, IAR = 5 A
Pch: VDD = −25 V, starting Tch = 25°C, L = 14.84 mH, RG = 25 Ω, IAR = −5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature.
Industrial Applications
Unit: mm
Weight: 2.1 g (typ.)
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