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MP4101TOSN/a834avaiPower Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.


MP4101 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
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MP4101
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
MP4101 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1)
MP4101

High Power Switching Applications.
Hammer Drive, Pulse Motor Drive.
Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation)
: PT = 4 W (Ta = 25°C) High collector current: IC (DC) = 4 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Zener diode included between collector and base.
Maximum Ratings (Ta = 25°C)
Tstg
Array Configuration

Industrial Applications
Unit: mm
Weight: 2.1 g (typ.)
R1 R2 9
R1 ≈ 4.5 kΩ R2 ≈ 300 Ω
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