| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MN3133 |
Panasonic|Panasonic |
N/a |
180 |
 |
Digital monolithic integrated circuits(MOS) |
MN3161
MN3171 Panasonic
MN3171 PAN
MN3171R PANASONIC
MN3133 , Digital monolithic integrated circuits(MOS)
MN3206 ,128-STAGE LOW VOLTAGE OPERATION LOW NOISE BBDElectrical Characteristics (Ta=25°C , VDD=VCPH=5V, chL=0V, VGG= % VDD, RL=100kQ)ConditionSignal Del ..
MN3207 ,1024-Stage Low Voltage Operation, Low Noise BBD for Analog Signal DelaysMOS IC, LSI MN3207MN3 2071024 gtiEtlelErlMt 71' n 'ft-Hiya)) El - / 4 A BBD1024-Stage Low Voltage O ..
MN3208 ,2048 STAGE LOW VOLTAGE OPERATION LOW NOISE BBDApplications Special 8-Lead Dual-ln-Line Plastic Packageq Reverberation and echo effects of audio e ..
MN3209 ,256 STAGE LOW VOLTAGE OPERATION LOW NOISE BBDGeneral descriptionThe MN3209 is a 256-stage low voltage operation ' =5V) low noise BBD that provid ..
MRF21060 ,MRF21060, MRF21060R3, MRF21060SR3 2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 1.02 °C ..
MRF21060SR3 ,RF Power Field Effect Transistors MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF2106 ..
MRF21085 ,MRF21085, MRF21085R3, MRF21085SR3, MRF21085LSR3 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.78 °C ..
