| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MN3114QFN |
PAN|Panasonic |
N/a |
62 |
 |
|
| MN3114QFN |
Panasonic|Panasonic |
N/a |
1937 |
|
|
MN3133 , Digital monolithic integrated circuits(MOS)
MN3206 ,128-STAGE LOW VOLTAGE OPERATION LOW NOISE BBDElectrical Characteristics (Ta=25°C , VDD=VCPH=5V, chL=0V, VGG= % VDD, RL=100kQ)ConditionSignal Del ..
MN3207 ,1024-Stage Low Voltage Operation, Low Noise BBD for Analog Signal DelaysMOS IC, LSI MN3207MN3 2071024 gtiEtlelErlMt 71' n 'ft-Hiya)) El - / 4 A BBD1024-Stage Low Voltage O ..
MN3208 ,2048 STAGE LOW VOLTAGE OPERATION LOW NOISE BBDApplications Special 8-Lead Dual-ln-Line Plastic Packageq Reverberation and echo effects of audio e ..
MN3209 ,256 STAGE LOW VOLTAGE OPERATION LOW NOISE BBDGeneral descriptionThe MN3209 is a 256-stage low voltage operation ' =5V) low noise BBD that provid ..
MRF21045 ,MRF21045R3, MRF21045LR3, MRF21045SR3, MRF21045LSR3 2170 MHz, 45 W, 28 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF21045/DThe RF MOSFET Line ..
MRF21045LR3 ,RF Power Field Effect Transistors MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF2104 ..
MRF21045LSR3 ,2170 MHz, 45 W, 28 V Lateral N–Channel RF Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
