MN3102 ,V(dd): -18 to +0.3V; 3mA; 45mW; integrated circuit (MOS)Electrical Characteristics (Ta=25°C)Maximum Ratings(Ta==25"C)Type No. FunctionItem Symbol Condition ..
MN3105 ,Microcomputers Application-Specific Standard-Product ICsElectrical Characteristics Ta=25°CParameter Symbol Conditions min typ max UnitSupply current I No ..
MN3111H ,For Video稟udioBlock Diagram33VL2Tristate Tristate V 36EEdriver driver2437VISUB DD23V39CC2IV138 22CH1IV240 21IV3IV ..
MN31121SA ,For Video稟udioPin DescriptionsPin No. Pin name I/O Description1O O SUB pulse outputSUB2V I Low-level power supply ..
MN31121SA ,For Video稟udioVideo Camera LSIMN31121SACCD Image Sensor Vertical Driver IC■ OverviewThe MN31121SA is a 2D interli ..
MN3112SA ,For Video稟udioFor Video EquipmentMN3112SAVertical Driver for Video-Camera CCD Area-Image-Sensor Overview Pin Assi ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.65 °C ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF19090/DThe RF MOSFET Line ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF19120 ,MRF19120, MRF19120S 1990 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF19125 ,MRF19125, MRF19125S, MRF19125SR3 1990 MHz, 125 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.53 °C ..
MN3102
