MN3007 ,Microcomputers/ControllersGeneral descriptionThe MN3007 is a 1024-stage long delay low noise BBD thatprovides a signal delay ..
MN3008 ,2048-Stage Low Noise BBDElectrical Characteristics (Ta = 25°C, VDD = chL = -15V, chH = 0V, VGG = -14V, Rt. = 100ki2)Item Sy ..
MN3009 ,256-STAGE LOW NOISE BBDAbsolute Maximum Ratings (Ta = 25°C)Item Symbol Ratings UnitTerminal Voltage VDD, Vac, ch, V. --18- ..
MN3010 ,Microcomputers Application-Specific Standard-Product ICsElectrical Characteristics (Ta = 25°C, VDD = chL = -15V, chH = 0V, Vss = -14V, Ru = 100ki2)Conditio ..
MN3011 ,3328-STAGE BBD WITH 6 TAPSAbsolute Maximum Ratings (Ta = 25°C)Item Symbol Ratings Unit RemarksTerminal Voltage V00, V66 -18-- ..
MN3101 ,CLOCK GENERATOR/DRIVER CMOS LSI FOR BBDFeaturesq BBD direct driving capability of up to two MN3005s(equivalent to 8192-stages).Self and se ..
MRF19060 ,MRF19060, MRF19060R3, MRF19060SR3 1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.97 °C ..
MRF19085 ,MRF19085, MRF19085R3, MRF19085SR3, MRF19085LSR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.64 °C ..
MRF19090 ,MRF19090, MRF19090S, MRF19090SR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.65 °C ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF19090/DThe RF MOSFET Line ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.65 °C ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MN3007
