MMFT960T1 ,MEDIUM POWER TMOS FET 300 mA 60 VOLTS3V, GATE-TO-SOURCE VOLTAGE (VOLTS) I , DRAIN CURRENT (AMPS) R , DRAIN-SOURCE RESISTANCE (OHMS)GS D ..
MMFT960T1G ,Power MOSFET 300 mA, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
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MMFT960T1-MMFT960T1G
Power MOSFET 300 mA, 60 Volts
MMFT960T1
Preferred DevicePower MOSFET300 mA, 60 Volts
N–Channel SOT–223This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc–dc converters,
solenoid and relay drivers. The device is housed in the SOT–223
package which is designed for medium power surface mount
applications. Silicon Gate for Fast Switching Speeds Low Drive Requirement The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
THERMAL CHARACTERISTICS Device mounted on a FR–4 glass epoxy printed circuit board using minimum
recommended footprint.
