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MMFT3055VONN/a3460avaiTMOS POWER FET 1.7 AMPERES 60 VOLTS


MMFT3055V ,TMOS POWER FET 1.7 AMPERES 60 VOLTS3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MMFT3055VL ,Power MOSFET 1 Amp, 60 Volts3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
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MMFT3055V
TMOS POWER FET 1.7 AMPERES 60 VOLTS
MMFT3055V
Power MOSFET
1 Amp, 60 Volts
N−Channel SOT−223

These Power MOSFETs are designed for low voltage, high speed
switching applications in power supplies, converters and power motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Features
Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Pb−Free Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.
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