MMFT3055EL ,MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS**Order this documentSEMICONDUCTOR TECHNICAL DATA by MMFT3055EL/D ** ** * ** **N–Channel Enhancemen ..
MMFT3055V ,TMOS POWER FET 1.7 AMPERES 60 VOLTS3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MMFT3055VL ,Power MOSFET 1 Amp, 60 Volts3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MMFT5P03HD ,TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MMFT5P03HDT1 ,Power MOSFET 5 Amps, 30 Voltsenergy in the avalanche and commutation modes and thedrain–to–source diode has a very low reverse r ..
MMFT5P03HDT3 ,Power MOSFET 5 Amps, 30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
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MMFT3055EL
MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS
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N–Channel Enhancement Mode
Silicon Gate TMOS E–FET
SOT–223 for Surface MountThis advanced E–FET is a TMOS power MOSFET designed to
withstand high energy in the avalanche and commutation modes.
This device is also designed with a low threshold voltage so it is
fully enhanced with 5 Volts. This new energy efficient device also
offers a drain–to–source diode with a fast recovery time. Designed
for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT–223 package which is designed for medium
power surface mount applications. Silicon Gate for Fast Switching Speeds Low Drive Requirement to Interface Power Loads to Logic
Level ICs, VGS(th) = 2 Volts Max Low RDS(on) — 0.18 Ω max The SOT–223 Package can be Soldered Using Wave or Re-
flow. The Formed Leads Absorb Thermal Stress During Sol-
dering, Eliminating the Possibility of Damage to the Die Available in 12 mm Tape and Reel
Use MMFT3055ELT1 to order the 7 inch/1000 unit reel.
Use MMFT3055ELT3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
DEVICE MARKING
THERMAL CHARACTERISTICS(1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
2,4
